美国莱斯大学物理与天文系杜瑞瑞教授应我所常凯研究员的邀请将于6月21日来我所学术交流，并在“黄昆半导体科学技术论坛”上作第126期报告，望感兴趣的科研人员及研究生积极参加!

报告题目：基于InAs/GaSb的自旋量子霍尔效应

报告时间：2010年6月21日(周一)上午10：00

报告地点：中科院半导体所学术沙龙室

报告人：杜瑞瑞教授(Department of Physics and Astronomy, Rice University)

报告摘要：The quantum Hall effect refers to the quantization of charge Hall resistance (in units of h/e2, where h is the Planck constant and e is the electronic charge), observed in a quantum well when an intense magnetic field is applied at low temperatures. The Quantum Spin Hall Effect (QSHE) is an emergent phenomenon recently discovered in semiconductors and other novel materials, where the intrinsic spin Hall conductance is quantized in the absence of any magnetic field. This talk will report on the experimental efforts in Rice University in low temperature quantum transport studies in InAs/GaAs quantum wells, in which an inverted band structure can be engineered and fine-tuning by electrostatic gates. We describe experimental results showing energy gap and edge transport in this system. The prospects for observing QSHE in this material and novel correlated properties, as predicted by recent theories, will be discussed.

报告人简介：杜瑞瑞教授毕业于复旦大学物理系，于1990年获美国University of Illinois at Champaign-Urbana物理博士学位。1990－1994普林斯顿大学/贝尔实验室博士后。1994－2004 犹他大学物理系教授。2004至今任莱斯大学物理与天文系教授。研究方向为低温量子输运，包括半导体二维电子系统中的分数量子霍尔效应，以及新型量子材料中的电子性质。曾获OCPA研究奖。于2003选为APS Fellow.

科技开发处