第76期：Silicon single-electron devices
2008-05-16
应我所吴南健研究员的邀请，日本NTT基础研究实验室的Akira Fujiwara博士将于5月15日上午来我所学术交流，并在“黄昆半导体科学技术论坛”上作第76期讲座。敬请广大科研人员及研究生积极参加!
报告题目: Silicon single-electron devices
报告时间: 2008年5月15日(星期四) 上午 10:00
报告地点: 中科院半导体研究所学术会议中心
报告人: Akira Fujiwara (NTT Basic Research Laboratories,Japan)
Abstract：Control and detection of single electrons are attracting much attention from the viewpoints of the application to future integrated circuit, metrological application, a tool for fundamental research. In the presentation will talk about our recent work one-by-one transfer of single electrons and their detection using silicon single-electron devices. We have recently achieved nanoampere current due to single-electron transfer using a gigahertz signal, which is promising for large-current source for metrological applications. It was found that the nonadiabaticy of the single-electron capture process plays an important role in the transfer mechanism. The talk will also include our work on the application of the single-electron detection to stochastic information processing by utilizing the random motion of single electrons. Some other research activities in nanodevices research group at NTT Basic Research Laboratories will be also introduced.
报告人简介：Akira Fujiwara was born in Japan on March 9, 1967. He received the B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan, in 1989, 1991, and 1994, respectively. In 1994, he joined LSI Laboratories, Nippon Telegraph and Telephone (NTT) Corporation, Kanagawa, Japan. He moved to the Basic Research Laboratories (BRL) in 1996. Since 1994, he has been engaged in research on silicon nanostructures and their application to single-electron devices. He was a guest researcher at National Institute of Standards and Technology (NIST), Gaithersburg, USA during 2003-2004. He received SSDM Young Researcher Award in 1998, SSDM Paper Award in 1999, and Japanese Journal of Applied Physics (JJAP) Paper Awards in 2003 and 2006. He was awarded Young Scientist Award from the Minister of MEXT (Ministry of Education, culture, sports, science, and technology) in 2006. He is a member of the Japan Society of Applied Physics and IEEE. He is currently a group leader of nanodevices research group at NTT BRL.
科技处
报告题目: Silicon single-electron devices
报告时间: 2008年5月15日(星期四) 上午 10:00
报告地点: 中科院半导体研究所学术会议中心
报告人: Akira Fujiwara (NTT Basic Research Laboratories,Japan)
Abstract：Control and detection of single electrons are attracting much attention from the viewpoints of the application to future integrated circuit, metrological application, a tool for fundamental research. In the presentation will talk about our recent work one-by-one transfer of single electrons and their detection using silicon single-electron devices. We have recently achieved nanoampere current due to single-electron transfer using a gigahertz signal, which is promising for large-current source for metrological applications. It was found that the nonadiabaticy of the single-electron capture process plays an important role in the transfer mechanism. The talk will also include our work on the application of the single-electron detection to stochastic information processing by utilizing the random motion of single electrons. Some other research activities in nanodevices research group at NTT Basic Research Laboratories will be also introduced.
报告人简介：Akira Fujiwara was born in Japan on March 9, 1967. He received the B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan, in 1989, 1991, and 1994, respectively. In 1994, he joined LSI Laboratories, Nippon Telegraph and Telephone (NTT) Corporation, Kanagawa, Japan. He moved to the Basic Research Laboratories (BRL) in 1996. Since 1994, he has been engaged in research on silicon nanostructures and their application to single-electron devices. He was a guest researcher at National Institute of Standards and Technology (NIST), Gaithersburg, USA during 2003-2004. He received SSDM Young Researcher Award in 1998, SSDM Paper Award in 1999, and Japanese Journal of Applied Physics (JJAP) Paper Awards in 2003 and 2006. He was awarded Young Scientist Award from the Minister of MEXT (Ministry of Education, culture, sports, science, and technology) in 2006. He is a member of the Japan Society of Applied Physics and IEEE. He is currently a group leader of nanodevices research group at NTT BRL.
科技处
