1.个人简介

刘志强 男，中国科学院半导体研究所特聘研究员，博士生导师，从事宽禁带半导体材料/器件研究，国家重点研发计划首席科学家，国家“863”计划项目负责人，重点研发计划课题负责人，在Science Advances、AM、AFM、Nano Letters等期刊发表论文160余篇，入选第三批中国科学院人才项目-“青年科学促进会”，获2019年国家科学技术进步一等奖（5）、2014年国家技术发明二等奖（5）。国际AFEM会议指导委员会委员，国际APWS会议程序委员会委员，目前的研究领域包括半导体材料范德华外延，氮化物超高清显示，氮化物电力电子器件，后摩尔时代半导体技术等。

2.主要科研方向

宽禁带半导体材料、器件

氮化物发光器件

氮化物电力电子器件研究（SBD、HEMT、MOSFET）

超高清显示器件

异质异构集成

健康光源产业化技术

3.主要学术成就

先后于吉林大学、南京大学、中国科学院半导体所、美国北卡大学、挪威科技大学从事科研工作。主要从事宽禁带半导体材料、器件，氮化物光电器件，氮化物电力电子器件，超高分辨率近眼显示器件，宽禁带异质异构集成，宽禁带/石墨烯交叉领域科研与产业化技术研究，先后主持国家重点研发计划、自然基金、863项目和院属项目等十余项，项目经费近5000万。参与国家重大项目多项。多项氮化物材料、器件核心指标为国际同期最好水平，成果得到中央电视台、科技日报等国内外媒体及诺贝尔奖得主等知名学者的引用和报道。近年来合作培养博士生、硕士生20余人，其中6人出国继续深造，毕业生国内就业单位包括中国科学院/高校/华为/中芯等。

近5年代表性论文：

(1)Qi Chen; Kailai Yang; Bo Shi; Xiaoyan Yi; Junxi Wang; Jimin Li; Zhiqiang Liu* ; Principles for 2D Material Assisted Nitrides Epitaxial Growth, Advanced Materials, 2023

(2)Kun Wang, Wenhao Li, Yitao Liao, Junlong Li, Rong Chen, Qi Chen, Bo Shi, Dae Hun Kim, Jae Hyeon Park, Yongai Zhang, Xiongtu Zhou, Chaoxing Wu*, Zhiqiang Liu*, Tailiang Guo*, Tae Whan Kim*. Electron Oscillation-Induced Splitting Electroluminescence from Nano-Leds for Device-Level Encryption.[J].Advanced Materials (Deerfield Beach, Fla.),2023.

(3)Wurui Song, Qi Chen, Kailai Yang, Meng Liang, Xiaoyan Yi,* Junxi Wang, Jinmin Li,* and Zhiqiang Liu*. Recent Advances in Mechanically Transferable III-Nitride Based on 2D Buffer Strategy[J]. Advanced Functional Materials,2023, 2209880.

(4)Chen Qi; Yang Kailai; Liang Meng; Kang Junjie; Yi Xiaoyan; Wang Junxi; Li Jinmin; Liu Zhiqiang*. Lattice modulation strategies for 2D material assisted epitaxial growth[J]. Nano Convergence,2023,10(1).

(5)Yan Yan, Shuo Zhang, Qun Ma, Ziyang Wang, Tao Feng, Qi Chen, Bo Shi, Fangyuan Sun*, Meng Liang*, Junxi Wang, Xiaoyan Yi, Jinmin Li*, and Zhiqiang Liu*. High Power Efficiency Nitrides Thermoelectric Device[J].Nano Energy, 2022, 101: 107568.

(6)Bingyao Liu, Qi Chen, Zhaolong Chen, Shenyuan Yang*, Jingyuan Shan, Zhetong Liu, Yue Yin, Fang Ren, Shuo Zhang, Rong Wang, Mei Wu, Rui Hou, Tongbo Wei, Junxi Wang, Jingyu Sun, Jinmin Li, Zhongfan Liu*, Zhiqiang Liu*, and Peng Gao*. Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer[J]. Nano Lett, 2022, 22: 3364-3371.

(7)Yue Yin, Bingyao Liu, Qi Chen, Zhaolong Chen, Fang Ren, Shuo Zhang, Zhetong Liu, Rong Wang, Meng Liang, Jianchang Yan, Jingyu Sun, Xiaoyan Yi, Tongbo Wei*, Junxi Wang, Jinmin Li, Zhongfan Liu*, Peng Gao*, and Zhiqiang Liu*. Continuous Single-Crystalline Gan Film Grown on Ws2 -Glass Wafer[J]. Small, 2022, e2202529.

(8)Zhiqiang Liu*, Bingyao Liu, Fang Ren, Yue Yin, Shuo Zhang, Meng Liang, Zhipeng Dou, Zhetong Liu, Shenyuan Yang*, Jianchang Yan, Tongbo Wei, Xiaoyan Yi, Chaoxing Wu, Tailiang Guo, Junxi Wang, Yong Zhang*, Jinmin Li, Peng Gao*. Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD. Small 2022, 2200057. DOI: 10.1002/smll.202200057.

(9)Tao Feng, Shuo Zhang, Kailai Yang, Qi Chen, Meng Liang*, Jianchang Yan, Xiaoyan Yi, Junxi Wang, Jinmin Li*, Zhiqiang Liu*. Graphene-Assisted Epitaxy of High-Quality GaN Films on GaN Templates [J].Advanced Optical Materials, 2022, 10, 2201262.

(10)Ren, Fang; Liu, Bingyao; Chen, Zhaolong; Yin, Yue; Sun, Jingyu; Zhang, Shuo; Jiang, Bei; Liu, Bingzhi; Liu, Zhetong; Wang, Jianwei; Liang, Meng; Yuan, Guodong; Yan, Jianchang; Wei, Tongbo; Yi, Xiaoyan; Wang, Junxi; Zhang, Yong; Li, Jinmin; Gao, Peng*; Liu, Zhongfan*; Liu, Zhiqiang. Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer.Science Advances 2021, 7 (31), eabf5011.

(11)Zhang, Shuo; Liu, Bingyao; Ren, Fang; Yin, Yue; Wang, Yunyu; Chen, Zhaolong; Jiang, Bei; Liu, Bingzhi; Liu, Zhetong; Sun, Jingyu; Liang, Meng; Yan, Jianchang; Wei, Tongbo; Yi, Xiaoyan*; Wang, Junxi; Li, Jinmin; Gao, Peng*; Liu, Zhongfan*; Liu, Zhiqiang*. Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films. Small 2021, 17 (19), 2100098. DOI: 10.1002/smll.202100098.

(12)Ci, Haina; Chang, Hongliang; Wang, Ruoyu; Wei, Tongbo*; Wang, Yunyu; Chen, Zhaolong; Sun, Yuanwei; Dou, Zhipeng; Liu, Zhiqiang*; Li, Jinmin*; Gao, Peng*; Liu, Zhongfan*. Enhancement of heat dissipation in ultraviolet light‐emitting diodes by a vertically oriented graphene nanowall buffer layer. Advanced Materials 2019, 31 (29), 1901624. DOI: 10.1002/adma.201901624.

(13)Chen, Zhaolong; Liu, Zhiqiang; Wei, Tongbo*; Yang, Shenyuan; Dou, Zhipeng; Wang, Yunyu; Ci, Haina; Chang, Hongliang; Qi, Yue; Yan, Jianchang, Wang, Junxi; Zhang，Yanfeng; Gao, Peng*; Li, Jinmin*; Liu, Zhongfan*. Improved epitaxy of AlN film for deep‐ultraviolet light‐emitting diodes enabled by graphene. Advanced Materials 2019, 31 (23), 1807345. DOI: 10.1002/adma.201807345.(共同第一作者)

4.个人联系方式（邮箱、电话等）

lzq@semi.ac.cn 82305423