汪连山，男，研究员，博士生导师

1999年2月毕业于中国科学院半导体研究所，获半导体材料工学博士学位。1998年8月至1999年8月在香港理工大学电子信息工程系做访问学者，主要研究AlGaN/GaN紫外探测器。1999年10月至2006年10月在新加坡材料研究与工程研究院（IMRE）工作，任职Research Scientist, 主要研究宽带隙氮化物半导体材料与器件, 先后实现了GaN基蓝光、绿光及紫外光发光二极管, 并与日本富士通量子器件(Fujistu Quantum Device)公司合作率先研制成功InGaN蓝光激光器。2006年10月至2011年8月为华中科技大学武汉光电国家实验室（筹）教授,主要从事半极性面氮化镓材料、图形衬底制备技术、ZnO纳米结构制备技术等研究工作，其中，2009年2月至7月在英国巴斯大学电子电机工程系做访问教授，主要研究GaN体衬底HVPE制备和自分离技术。2011年9月至2013年4月为中国科学院半导体研究所半导体照明中心研究员，主要从事基于金属基板和表面光子晶体的高效大功率LED芯片研发及产业化。2013年5月内调至半导体材料科学重点实验室，主要从事半极性、非极性氮化物半导体材料与器件制备技术和新型太阳能电池材料制备技术研究与应用。迄今发表学术论文130余篇，累计引用1400余次，取得发明专利19项，并受邀为Applied Physics Letters、IEEE Photonics Technology Letters、Electrochemical Society (ECS) Journal of Solid-State Science and Technology、Electrochemical and Solid State Letters、Materials Science and Engineering B、Applied Surface Science、J. Crystal Growth、Crystal Research & Technology, J. Appl. Phys., IEEE Photonics, Scientific Reports, RCA Advance, Royal Society Open Science, J. Semiconductors, Optiks, Optical and Quantum Electronics, Crystal growth and Design, Results in Engineering,《光学学报》、《中国科学》、《发光学报》等期刊论文评审人、国家基金委项目和广东省科技咨询及产学研项目评审专家。

Biography

Dr.LIANSHAN WANG is a professor at Institute of Semiconductors, Chinese Academy of Sciences. He is also a post adjunct professor in the College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences.He received his doctorate in 1999 on III-nitride semiconductor materials via metal-organic chemical vapor deposition (MOCVD) at Institute of Semiconductors, Chinese Academy of Sciences. From 1998 to 1999, he also engaged in molecular beam epitaxy (MBE) for growth of GaN at Hong Kong Polytechnic University as an academic visitor. After that, he joined the Institute of Materials Research and Engineering Singapore as a research scientist in 1999, where he developed the growth technology of GaN and InGaN on silicon-on-insulator (SOI) and realized the blue /green light-emitting diodes as well as the lasing of a blue laser diode under a pulsed current injection in 2002, collaborated with Fujitsu Quatum Device Ltd. In Oct. 2006, he joined Wuhan National Laboratory for Optoelectronics (WNLO) of Huazhong University of Sciences and Technology (HUST) as a professor. From January to July, he short-term worked for NanoGaN as an academic visitor within Department of Electronic and Electrical Engineering, University of Bath. In Sept. 2011, he started to work for Institute of Semiconductors, Chinese Academy of Sciences as a professor, where he developed the InGaN MQWs light-emitting diodes on c-plane patterned sapphire substrates and semipolar InGaN MQWs blue, green, yellow, amber and red light-emitting diodes on m-plane sapphire substrates for a full-color display, as well as AlGaN high electron mobility transistors (HEMT) on sapphire and silicon substrates. Now he is working on the AlN template and AlGaN-based deep ultraviolet light-emitting diodes for applications in sterilization, water purification, medicine, and biochemistry

主要研究领域或方向(Research Areas & Programs)

1.氮化物半导体材料与器件(发光器件、射频功率器件、探测器件、电子电力器件)

2.III-Nitride Semiconductor Materials and Devices (Light-emitters, RF Power Devices, Detective Devices, Electronic and Electric Devices)

3.二维材料的制备、结构与性质

4.2D Materials, Structure and Properties

5.新型太阳能电池制备技术与应用

联系方式(Contact)：

电话(Tel): 010-82304236

电子邮箱(Email):ls-wang@semi.ac.cn

网页(webpages): http://people.ucas.ac.cn/~wls20130612

https://www.researchgate.net/profile/Lianshan-Wang

https://scholar.google.com/citations?hl=en&user=EoGLX6EAAAAJ

     近期论文(Recent Publication List)

1.Wenlong Li, Ling Wen, Ruohao Chai, Lianshan Wang*, “Regrowth characteristics of semipolar (11–22) GaN epitaxial film on corroded semipolar GaN template”, Micro and Nanostructures 182, 207649 (2023)

2.Shuping Zhang, Hong Yang, Lianshan Wang*, Hongjuan Cheng, Haixia Lu, Yanlian Yang, Lingyu Wan, Gu Xu, Ian T. Ferguson,g Zhe Chuan Feng, and Wenhong Sun, “A comparative study of structural, surface and optical properties for m- and c-face AlN crystals grown by physical vapor transport method”, Materials, 16, 1925 (2023)

3.Bangyao Mao, Shu’an Xing, Guijuan Zhao∗, Lianshan Wang, Ning Zhang, Hailong Du and Guipeng Liu, “Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD”, Semicond. Sci & Tech. 38, 035014 (2023)

4.Huidan Niu, Weizhen Yao, Shaoyan Yang, Xianglin Liu, Qingqing Chen, Lianshan Wang, Huanhua Wang and Zhanguo Wang, “Effect of pressure on GaN growth in a specific warm-wall MOCVD reactor”, CrystEngComm, 25(8), 1263 (2023)

5.Qingqing Chen, Shaoyan Yang, Chengming Li, Weizhen Yao, Xianglin Li, Huidan Niu, Rui Yang, Huijie Li, Hongyuan Wei, Lianshan Wang, “MOCVD growth of ZrN thin films on GaN/Si templates and the effect of substrate temperature on growth mode, stress state, and electrical properties”, J. Phys. D: Appl. Phys. 55, 404003 (2022)

6.Wenlong Li, Lianshan Wang*, Ruohao Chai, Ling Wen, Zhen Wang, Wangguo Guo, Huanhua Wang, and Shaoyan Yang, “Anisotropic Strain Relaxation in Semipolar (11-22) InGaN/GaN Superlattice Relaxed Templates”, Nanomaterials, 12, 03007 (2022)

7.Zhiqiang Chen, Shaodong Deng, Min Li, Mengwei Su, Xinling Zhu, Yukun Wang, Ziqian Chen, Jianyu Deng, Lianshan Wang*, Wenhong Sun, “Carrier Distribution Characteristics of AlGaN -based Ultraviolet Light-Emitting Diodes at Elevated Temperature”, J. of Mater. Sci.: Mater. in Electron. 33, 17395-17403 (2022)

8.Shu'an Xing, Guijuan Zhao, Bangyao Mao, Heyuan Huang, LianshanWang*, Xunshuan Li, WengeYang, Guipeng Liu, Jianhong Yang，“The same band alignment of two hybrid 2D/3D vertical heterojunctions formed by combining monolayer MoS2 with semi-polar (11-22) GaN and c-plane (0001) GaN”, Applied Surface Sicence,599, 153965 (2022)

9.Haixia Lu, Lianshan Wang, Yao Liu, Shuping Zhang, Yanlian Yang, Vishal Saravade, Zhe Chuan Feng, Benjamin Klein,d Ian T. Ferguson, Lingyu Wan, and Wenhong Sun, “A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition.”, Semicond. Sci & Tech. 37, 065021 (2022)

10.Wenlong Li, Lianshan Wang,*, Ruohao Chai, Ling Wen, Haixia Lu, Huanhua Wang, Shaoyan Yang, and Wenhong Sun, “The influence of high-temperature nitridation process on the crystalline quality of semipolar (11-22) GaN epitaxial films”, Current Appl. Physics, 39, 38 (2022)

11.Ruohao Chai, Lianshan Wang*, Ling Wen, Wenlong Li, Shuping Zhang, Wenwang Wei, Wenhong Sun, Shaoyan Yang, “Raman spectra of semi-polar (11-22) InGaN thick film”, Vibrational Spectroscopy119, 103357 (2022)

12.Ling Wen, Lianshan Wang*, Ruohao Chai, Wenlong Li, Shaoyan Yang, “Wet etching of semi-polar (11–22) GaN on m-sapphire by different methods”, J. Crystal Growth, 570, 126200-(2021)

13.Weizhen Yao, Lianshan Wang*, Yulin Meng, Shaoyan Yang, Xianglin Liu, Huidan Niu, Zhanguo Wang, “Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes”, CrystEngComm. 23, 2360-2366 (2021)

14.Weizhen Yao, Fangzheng Li, Lianshan Wang* Sheng Liu, Hongyuan Wei, Shaoyan Yangab and Zhanguo Wang,“Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates”, CrystEngComm. 22(18), 3198-3205 (2020)

15.J. L. Chen, Y. Peng, X. Zhang, W. W. Wei, S. K. Zhong, K. Y. He, L. S. Wang, J. C. Zhang, Z. Q. Chen, and W. H. Sun , “Long time aging effect on Be-implanted GaN epitaxial layer”, AIP Advances 9, 055209 (2019)

16.Fangzheng Li, Lianshan Wang*, Weizhen Yao, Yulin Meng, Shaoyan Yang Zhanguo Wang, “Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition”, Superlattices and Microstructures, 137, 106336 (2020)

17.Weizhen Yao, Lianshan Wang*, Fangzheng Li, Yulin Meng, Shaoyan Yang and Zhanguo Wang, “Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors”, Semiconductor Science and Technology, 34(12),125006 (2019)

18.Jun Hu, Hongyuan Wei, Shaoyan Yang, Chengming Li, Huijie Li, Xianglin Lin, Lianshan Wang, Zhanguo Wang, “Hydride vapour phase epitaxy for gallium nitride substrate”, J. of Semoconductors, 40(10), 101801 (2019)

19.Yulin Meng , Lianshan Wang*, Fangzheng Li, Guijuan Zhao, Weizhen Yao, Shaoyan Yang and Zhanguo Wang，“Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures”, Mater. Res. Express 6(8) (2019) 0850c8

20.Weizhen Yao,Lianshan Wang*, Fangzheng Li, Yulin Meng, Shaoyan Yang,and Zhanguo Wang, “Impact of Cone-Shape-Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p-GaN via MOCVD”, Physica Status Solidi (a) 216(14), 1900026-1-5 (2019)