个人简介：

张兴旺，男，研究员，博士生导师。1972年出生于安徽怀宁，分别于1994和1999年从兰州大学物理系获学士和博士学位。1999至 2001年在香港中文大学电子工程系进行博士后研究，2001至2004年任德国乌尔姆大学固体物理系博士后及洪堡学者，于2004年7月加入中国科学院半导体材料科学重点实验室。现任国际空间研究委员会中国委员会（CNCOSPAR）委员、中国空间科学学会微重力科学与应用研究专业委员会副主任、中国真空学会薄膜专业委员会委员。

主要科研方向：

宽带隙半导体材料与器件

二维原子晶体材料与器件

半导体光电材料与器件

主要学术成就：

首次成功制备出异质外延生长的立方氮化硼薄膜，为实现c-BN薄膜作为高温电子材料奠定了基础；发展了一种制备大面积、高质量六方氮化硼二维原子晶体的新方法，研制出多种基于二维异质结构的高性能光电器件，实现了基于h-BN中间层的远程外延生长，为制备高质量二维范德华异质结提供了一种新方法。领导的课题组两次创造有机无机杂化钙钛矿太阳能电池光电转换效率的世界纪录，研制出高效稳定的红、绿、蓝钙钛矿LEDs。已主持承担国家重点研发计划等各类科研项目30余项，在Nature Mater., Nature Energy, Nature Photon., Nature Commun., Adv. Mater.等期刊发表SCI论文200余篇，论文被他引14000余次，获授权发明专利26项，在美国MRS等国际学术会议做邀请报告多次，曾获北京市自然科学一等奖、北京市科技进步奖、中国科学院优秀导师奖等奖励。

代表性论文：

1.G. K. Wang, J. D. Huang, S. Y. Zhang, J. H. Meng*, J. R. Chen, Y. M. Shi, J. Jiang, J. Z. Li, Y. Cheng, L. B. Zeng, Z. G. Yin*, X. W. Zhang*, Wafer-scale single crystal hexagonal boron nitride layers grown by submicron-spacing vapor deposition, Small 19, 2301086 (2023).

2.J. D. Huang, J. R. Chen, J. H. Meng, S. Y. Zhang, J. Jiang, J. Z. Li, L. B. Zeng, Z. G. Yin, J. L. Wu, X. W. Zhang*, Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride, Nano Res. 16, (2023).10.1007/s12274-023-6171-3

3.J. Jiang, Z. M. Chu, Z. G. Yin, J. Z. Li, Y. G. Yang, J. R. Chen, J. L. Wu, J. B. You*, and X. W. Zhang*,Red perovskite light-emitting diodes with efficiency exceeding 25% realized by cospacer cations, Adv. Mater. 34, 2204460-8 (2022).

4.J. R. Chen, G. K. Wang, J. H. Meng*, Y. Cheng, Z. G. Yin, Y. Tian, J. D. Huang, S. Y. Zhang, J. L. Wu, and X. W. Zhang*, Low-temperature direct growth of few-layer hexagonal boron nitride on catalyst-free sapphire substrates, ACS Appl. Mater. Interfaces 14, 7004-7011 (2022).

5.J. Z. Li, L. Zhang, Z. M. Chu, C. H. Dong, J. Jiang, Z. G. Yin, J. B. You, J. L. Wu, W. Lan, and X. W. Zhang*, Amplified spontaneous emission with a low threshold from quasi-2D perovskite films via phase engineering and surface passivation, Adv. Opt. Mater. 10, 2102563 (2022).

6.Y. Tian, Y. Cheng, J. D. Huang, S. Y. Zhang, H. Dong, G. K. Wang, J. R. Chen, J. L. Wu, Z. G. Yin*, and X. W. Zhang*, Epitaxial growth of large area ZrS2 2D semiconductor films on sapphire for optoelectronics, Nano Res. 15, 6628–6635 (2022).

7.Z. M. Chu, Q. F. Ye, Y. Zhao, F. Ma, Z. G. Yin, X. W. Zhang*, and J. B. You*, Perovskite light-emitting diodes with external quantum efficiency exceeding 22% via small-molecule passivation, Adv. Mater. 33, 2007169 (2021).

8.Y. Wang, J. H. Meng*, Y. Tian, Y. N. Chen, G. K. Wang, Z. G. Yin, P. Jin, J. B. You, J. L. Wu, and X. W. Zhang*, Deep ultraviolet photodetectors based on carbon-doped two-dimensional hexagonal boron nitride, ACS Appl. Mater. Interfaces 12, 27361-27367 (2020).

9.Z. M. Chu, Y. Zhao, F. Ma, C. X. Zhang, H. X. Deng, F, Gao, Q. F. Ye, J. H. Meng, Z. G. Yin, X. W. Zhang*, and J. B. You*, Large cation ethylammonium incorporated perovskite for efficient and spectra stable blue light-emitting diodes, Nat. Commun.11, 4165-8 (2020).

10.Q. F. Ye, F. Ma, Y. Zhao, S. Q. Yu, Z. M. Chu, P. Q. Gao*, X. W. Zhang*, and J. B. You*, Stabilizing -CsPbI3 Perovskite via phenylethylammonium for efficient solar cells with open-circuit voltage over 1.3 V, Small 16, 2005246-7 (2020).

11.D. G. Wang, Y. Lu, J. H. Meng*, X. W. Zhang*, Z. G. Yin, M. L. Gao, Y. Wang, L. K. Cheng, J. B. You, and J. C. Zhang, Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride, Nanoscale11, 9310-9318 (2019).

12.Y. Wang, X. W. Zhang*, D. G. Wang, X. X. Li, J. H. Meng, J. B. You, Z. G. Yin, and J. L. Wu, Compositional engineering of mixed-cation lead mixed-halide perovskites for high-performance photodetectors, ACS Appl. Mater. Interfaces 11, 28005-28012 (2019).

13.L. K. Cheng, J. H. Meng*, X. J. Pan, Y. Lu, X. W. Zhang*, M. L. Gao, Z. G. Yin, D. G. Wang, Y. Wang, J. B. You, J. C. Zhang, and E. Q. Xie, Two-dimensional hexagonal boron-carbon-nitrogen atomic layers, Nanoscale11, 10454-10462 (2019).

14.M. L. Gao, J. H. Meng*, Y. N. Chen, S. Y. Ye, Wang, C. Y. Ding,Y. B. Li Y. Z. G. Yin, X. B. Zeng, P. Jin, J. B. You, and X. W. Zhang*, Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors, J. Mater. Chem. C 7, 14999-15006 (2019).

15.Q. F. Ye, Y. Zhao, S. Q. Mu, F. Ma, F. Gao, Z. M. Chu, Z. G. Yin, P. Q. Gao*, X. W. Zhang*, and J. B. You*, Cesium lead inorganic solar cell with efficiency beyond 18% via reduced charge recombination, Adv. Mater. 31, 1905143-6 (2019).

16.J. H. Meng, B. M. Ming, X. W. Zhang*, M. L. Gao, L. K. Cheng, Z. G. Yin, D. G. Wang, X. X. Li, J. B. You, and R. Z. Wang, Controlled growth of unidirectionally aligned hexagonal boron nitride domains on single crystal Ni (111)/MgO thin films, Cryst. Growth Des. 19, 453-459 (2019).

17.Q. Jiang, Y. Zhao, X. W. Zhang, X. L. Yang, Y. Chen, Z. M. Chu, Q. F. Ye, X. X. Li, Z. G. Yin, and J. B. You*, Surface passivation of perovskite film for efficient solar cells, Nature Photon. 13, 460-466 (2019).

18.D. G. Wang, X. W. Zhang*, G. C. Guo, S. H. Gao, X. X. Li, J. H. Meng, Z. G. Yin, H. Liu, M. L. Gao, L. K. Cheng, J. B. You, and R. Z. Wang, Large-area synthesis of layered HfS2(1-x)Se2x alloys with fully tunable chemical compositions and bandgaps, Adv. Mater.30, 1803285 (2018).

19.D. G. Wang, J. H. Meng, X. W. Zhang*, G. C. Guo, Z. G. Yin, H. Liu, L. K. Cheng, M. L. Gao, J. B. You, and R. Z. Wang, Selective direct growth of atomic layered HfS2 on hexagonal boron nitride for high performance photodetectors, Chem. Mater. 30, 3819-3826 (2018).

20.X. L. Yang, X. W. Zhang, J. X. Deng, Z. M. Chu, Q. Jiang, J. H. Meng, P. Y. Wang, L. Q. Zhang, Z. G. Yin, and J. B. You*, Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation, Nat. Commun. 9, 570 (2018).

21.P. Y. Wang, X. W. Zhang, Y. Q. Zhou, Q. Jiang, Q. F. Ye, Z. M. Chu, X. X. Li, X. L. Yang, Z. G. Yin, and J. B. You*, Solvent-controlled growth of inorganic perovskite films in dry environment for efficient and stable solar cells, Nat. Commun. 9, 2225 (2018).

22.Q. Jiang, X. W. Zhang*, and J. B. You*, SnO2: a wonderful electron transport layer for perovskite solar cells, Small 14, 1801154-14 (2018).

23.Y. Wang, X. W. Zhang*, Q. Jiang, H. Liu, D. G. Wang, J. H. Meng, J. B. You, Z. G. Yin, and J. L. Wu, Interface engineering of high-performance perovskite photodetectors based on PVP/SnO2 electron transport layer, ACS Appl. Mater. Interfaces 10, 6505-6512 (2018).

24.H. Liu, J. H. Meng, X. W. Zhang*, Y. N. Chen, Z. G. Yin, D. G. Wang, Y. Wang, J. B. You, M. L. Gao, and P. Jin, High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride,Nanoscale 10, 5559-5565 (2018).

25.J. H. Meng, X. W. Zhang*, Y. Wang, Z. G. Yin, H. Liu, J. Xia, H. L. Wang, J. B. You, P. Jin, D. G. Wang, and X.-M. Meng, Aligned growth of millimeter-size hexagonal boron nitride single-crystal domains on epitaxial nickel thin film, Small 13, 1604179-8 (2017).

26.Q. Jiang, L. Q. Zhang, H. L. Wang, X. L. Yang, J. H. Meng, H. Liu, Z. G. Yin, J. L. Wu, X. W. Zhang*, and J. B. You*, Enhanced electron extraction using SnO2 for high-efficiency planar-structure HC(NH2)2PbI3-based perovskite solar cells, Nature Energy 2, 16177 (2017).

27.Q. Jiang, Z. M. Chu, P. Y. Wang, X. L. Yang, H. Liu, Y. Wang, Z. G. Yin, J. L. Wu, X. W. Zhang*, and J. B. You*, Planar-structure perovskite solar cells with efficiency beyond 21%, Adv. Mater. 29, 1703852 (2017).

28.D. G. Wang, X. W. Zhang*, H. Liu, J. H. Meng, J. Xia, Z. G. Yin, Y. Wang, J. B. You, and X.-M. Meng, Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors, 2D Mater. 4, 031012-7 (2017).

29.H. Liu, X. W. Zhang*, L. Q. Zhang, Z. G. Yin, D. G. Wang, J. H. Meng, Q. Jiang, Y. Wang, and J. B. You, A high-Performance photodetector based on an inorganic perovskite-ZnO heterostructure, J. Mater. Chem. C 5, 6115-6122 (2017).

30.L. Q. Zhang, X. L. Yang, Q. Jiang, P. Y. Wang, Z. G. Yin, X. W. Zhang*, H. R. Tan, Y. Yang, M. Y. Wei, B. R. Sutherland, E. H. Sargent, and J. B. You*, Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes, Nat. Commun. 8, 15640-8 (2017).

31.J. H. Meng, X. Liu, X. W. Zhang*, Y. Zhang, H. L. Wang, Y. Z. Zhang, H. Liu, Z. G. Yin, J. B. You, and H. Yan, Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer, Nano Energy 28, 44-50 (2016).

32.J. H. Meng, X. W. Zhang*, H. Liu, Z. G. Yin, D. G. Wang, J. B. You, and J. L. Wu, Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering, Appl. Phys. Lett. 109, 173106 (2016).

33.H. L. Wang, X. W. Zhang*, H. Liu, Z. G. Yin, J. H. Meng, J. Xia, X. M. Meng, J. L. Wu, and J. B. You, Synthesis of large-sized single crystal hexagonal boron nitride domains on nickel foils by ion beam sputtering deposition, Adv. Mater. 27, 8109-8115 (2015).

34.H. L. Wang, X. W. Zhang*, J. H. Meng, Z. G. Yin, X. Liu, Y. J. Zhao, and L. Q. Zhang, Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition, Small 11, 1542-1547 (2015).

35.L. Q. Zhang, X. W. Zhang*, Z. G. Yin, Q. Jiang, J. H. Meng, Y. J. Zhao, X. Liu, and H. L. Wang, Highly efficient and stable planar heterojunction perovskite solar cells via low temperature solution process, J. Mater. Chem. A, 3, 12133-12138 (2015).

36.J. H. Meng, X. W. Zhang*, H. L. Wang, X. B. Ren, C. H. Jin, Z. G. Yin, X. Liu, and H. Liu, Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition, Nanoscale 7, 16046-16053 (2015).

37.H. L. Gao, X. W. Zhang*, J. H. Meng, Z. G. Yin, L. Q. Zhang, J. L. Wu, and X. Liu, Enhanced efficiency in polymer solar cells via hydrogen plasma treatment of ZnO electron transport layers, J. Mater. Chem. A, 3, 3719-3725 (2015).

38.X. Liu, X. W. Zhang*, J. H. Meng, Z. G. Yin, L. Q. Zhang, H. L. Wang, and J. L. Wu, High efficiency Schottky junction solar cells by co-doping of graphene with gold nanoparticles and nitric acid, Appl. Phys. Lett.106, 233901-5 (2015).

39.X. Liu, X. W. Zhang*, Z. G. Yin, J. H. Meng, H. L. Gao, L. Q. Zhang, Y. J. Zhao, and H. L. Wang, Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles, Appl. Phys. Lett. 105, 183901-5 (2014).

40.S. G. Zhang, X. W. Zhang*, X. Liu, Z. G. Yin, H. L. Wang, H. L. Gao, and Y. J. Zhao, Raman peak enhancement and shift of few-layer graphene induced by plasmonic coupling with silver nanoparticles, Appl. Phys. Lett. 104, 121109-5 (2014).

41.S. G. Zhang, X. W. Zhang*, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer, Appl. Phys. Lett. 101, 121104 (2012).

42.H. L. Gao, X. W. Zhang*, Z. G. Yin, H. R. Tan, W. Song, S. G. Zhang, J. H. Meng, and X. Liu, Plasmon enhanced polymer solar cells by spin-coating Au nanoparticles on indium-tin-oxide substrate, Appl. Phys. Lett. 101, 133903 (2012).

43.S. G. Zhang, X. W. Zhang*, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes, Appl. Phys. Lett. 99, 181116-3 (2011).

44.J. J. Dong, X. W. Zhang*, Z. G. Yin, S. G. Zhang, H. R. Tan, J. X. Wang, Y. Gao, F. T. Si, and H. L. Gao, Controllable growth of highly ordered ZnO nanorod arrays via inverted self-assembled monolayer template, ACS Appl. Mater. Interfaces 3, 4388-4395 (2011).

45.J. J. Dong, X. W. Zhang*, J. B. You, P. F. Cai, Z. G. Yin, Q. An, X. B. Ma, P. Jin, Z. G. Wang, and Paul K. Chu, Effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films: identification of hydrogen donors in ZnO, ACS Appl. Mater. Interfaces 2, 1780-1784 (2010).

46.J. B. You, X. W. Zhang*, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, Paul. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes, Appl. Phys. Lett. 96, 201102-3 (2010).

47.J. B. You, X. W. Zhang*, P. F. Cai, J. J. Dong, Y. Gao, Z. G. Yin, N. F. Chen, R. Z. Wang, and H. Yan, Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment, Appl. Phys. Lett. 94, 262105-3(2009).

48.P. F. Cai, J. B. You, X. W. Zhang*, J. J. Dong, X. L. Yang, Z. G. Yin, and N. F. Chen, Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment, J. Appl. Phys. 105, 083713-6 (2009).

49.J. B. You, X. W. Zhang*, Y. M. Fan, S. Qu, and N. F. Chen, Surface plasmon enhanced ultraviolet emission from ZnO films deposited on Ag/Si(001) by magnetron sputtering, Appl. Phys. Lett. 91, 231907-3 (2007).

50.X. W. Zhang, H.-G. Boyen, N. Deyneka, P. Ziemann, F. Banhart, and M. Schreck, Epitaxy of cubic boron nitride on (001)-oriented diamond, Nature Mater. 2, 312-315 (2003).

个人联系方式

Email: xwzhang@semi.ac.cn；

Tel: 10-82304569