梁锋
- 个人简介：
梁锋，男，博士，硕士生导师，青年研究员，中国科学院特聘骨干，电子学会会员。2013进入中国科学院半导体所硕博连读，2018年博士毕业后留所工作，一直从事氮化镓(GaN)基材料与激光器芯片研究。2021年入选中国科协第六届“青年人才托举工程”，2022年获得了中国科学院半导体所“青年创芯奖（特等奖）”，2023年入选中国科学院青促会会员、中国科学院半导体所青年研究员、中国科学院特聘骨干。承担国家自然科学基金面上及青年项目、科技部重点研发计划（课题）、北京市科委前沿新材料（子课题）、华为技术开发等多个项目。
2023.06至今中国科学院半导体研究所青年研究员
2022.09-2023.06中国科学院半导体研究所副研究员
2018.07-2022.09 中国科学院半导体研究所助理研究员
- 主要科研方向
GaN基材料与器件
- 主要学术成就
经过多年努力和攻关，解决了高性能GaN基蓝光激光器材料、p型技术、器件设计、工艺制备等难题，研制出高性能GaN基蓝光激光器，室温连续输出光功率6 W（国际一流水平），寿命超过10000小时（国内唯一公开报道），器件性能处于国际水平。
目前，已在Optics Express、Applied Surface Science、Nanophotonics等国际期刊发表唯一一作SCI论文25篇、通讯作者SCI论文31篇。在碳杂质方面的相关研究成果受到诺贝尔奖获得者Hiroshi Amano教授、美国工程院院士Umesh K. Mishra教授的高度认可，部分器件物理与材料外延技术研究成果被SemiconductorToday报道。
主要研究领域方向：GaN基材料与器件
主持项目：
1.GaN基蓝光激光器腔面功率密度调控机理，国家自然科学基金委（面上项目），在研，主持
2.GaN基蓝光激光器工作电压的抑制及机理，国家自然科学基金委（青年项目），23万，结题，主持
3.适配性表面消杀关键技术及智能装备开发，科技部国家重点研发计划（课题），186万，结题，主持
4.青年创新促进会会员，中国科学院，在研，主持
5.第六届青年人才托举工程，中国科协，在研，主持
6.千瓦级高光束质量蓝光半导体激光器工程化研究，市科技计划（前沿新材料子课题），150万，主持
7.MOCVD绿光大功率激光器，在研，主持
8.GaN基紫光激光器，在研，主持
9.GaN基蓝光激光器加工，在研，主持
个人联系方式
电话：010-82304208、010-82304424
邮箱：liangfeng13@semi.ac.cn
代表性论文：
1.Wang Yachen, Liang Feng*, Yang Jing, Liu Zongshun, Zhao Degang, “Investigation of the Indium migration mechanism in the growth of InGaN quantum wells by MOCVD” J. Cryst growth.623, 127404 (2023).
2.Hou Yufei, Liang Feng*, Zhao Degang, Chen Ping, Yang Jing, Liu Zongshun, “Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells” Results Phys.46, 106305 (2023).
3.Chen Zhenyu, Liang Feng*, Zhao Degang*, Yang Jing, Chen Ping, Jiang Desheng, “Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux” Crystals. 13, 127 (2023).
4.Liang Feng, Zhao Degang*, Liu Zongshun, Chen Ping, Yang Jing,“Lower threshold current density of GaN-based blue laser diodes by suppressing the nonradiative recombination in a multiple quantum well” Opt. Express30, 31044 (2022). (长寿命GaN基蓝光激光器）
5.Liang Feng, Zhao Degang*, Liu Zongshun, Chen Ping, Yang Jing,“Improved performance of GaN-based blue laser diodes using asymmetric multiple quantum wells without the first quantum barrier layer” Opt. Express30, 9913 (2022).
6.Liang Feng, Zhao Degang*, Liu Zongshun, Chen Ping, Yang Jing, “Intermedial annealing process applied during the growth of quantum wells and its influence on the performance of GaN-based laser diodes” Opt. Express30, 3416 (2022).
7.Liang Feng, Zhao Degang*, Liu Zongshun, Chen Ping, Yang Jing, "Suppression of V-pits formation in InGaN layer by stepped growth with annealing interval”Surf. Interfaces 28, 101691 (2022).
8.Liang Feng, Zhao Degang*, Jiang Desheng, Wang Wenjie, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Zhang Liqun, “Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer “Nanophotonics9, 667 (2020).
9.Liang Feng, Zhao Degang*, Liu Zongshun, Chen Ping, Yang Jing, Duan Lihong, Shi Yongsheng, Wang Hai, “GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature” J. Semicond. 42, 112801 (2021).（6W大功率GaN基蓝光激光器）
10.Liang Feng, Zhao Degang*, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Liu Wei, Liu Shuangtao, Xing Yao, Zhang Liqun, Wang Wenjie, Li Mo, Zhang Yuantao, DuGuotong, “Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide”Jpn. J. Appl. Phys. 57, 070307 (2019).
11.Liang Feng,Zhao Degang*, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Liu Wei, Liu Shuangtao, Xing Yao, Zhang Liqun, Wang Wenjie, Li Mo, Zhang Yuantao, Du Guotong, “Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide” J. Alloy. Compd. 731, 243 (2018).
12.Liang Feng,Zhao Degang*, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Liu Shuangtao, Xing Yao, Zhang Liqun, “Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN”Nanomaterials8, 1026 (2018).
13.Liang Feng, Zhao Degang*, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Liu Shuangtao, Xing Yao, Zhang Liqun, Wang Wenjie, Li Mo, Zhang Yuantao, Du Guotong, “Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN” Nanomaterials8, 744 (2018).
14.Liang Feng, Zhao Degang*, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Liu Wei, Li Xiang, Liu Shuangtao, Xing Yao, Zhang Liqun, Long Heng, Li Mo, “New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode”Opt. LaserTechnol. 97, 284 (2017).
15.Liang Feng, Zhao Degang*, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Liu Wei, Li Xiang, Liu Shuangtao, Xing Yao, Zhang Liqun, Yang Hui, Long Heng, Li Mo, “Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer” J. Cryst growth.467, 127404 (2017).
16.Ben Yuhao, Liang Feng*, Zhao Degang*, Yang Jing, Chen Ping, Liu Zongshun, “The direct evidence of the composition pulling effect and its role in InGaN multiple quantum wells”J. Mater. Res. Technol. 21, 2228 (2022).
17.Wang Yachen, Liang Feng*, Zhao Degang*, Ben Yuhao, Yang Jing, Liu Zongshun, Chen Ping, “Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells” Nanomaterials12, 3114 (2022).
18.Ben Yuhao, LiangFeng, D.G. Zhao*, Yang Jing, Chen Ping, Liu Zongshun, “Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers” Nanomaterials12, 2581 (2022).
19.Ben Yuhao, LiangFeng*, Zhao Degang*, Yang Jing, Chen Ping, Liu Zongshun,“The role of InGaN quantum barriers in improving the performance of GaN-based laser diodes” Opt. LaserTechnol. 145, 107523 (2022).
20.HouYufei, Liang Feng*, Zhao Degang*, Liu Zongshun, Chen Ping, Yang Jing, “Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment”ResultsPhys. 31, 105057 (2022).
21.Hou Yufei, Zhao Degang*, Chen Ping, Liang Feng*, Liu Zongshun, Yang Jing, “Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes”Opt. Express29, 33992 (2021).
22.Wang Baibin, Liang Feng*, Zhao Degang*, Ben Yuhao, Yang Jing, Chen Ping, Liu Zongshun, “Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN”Opt. Express29, 3685 (2021).
23.Ben Yuhao, Liang Feng, Zhao Degang*, Wang Xiaowei, Yang Jing, Liu Zongshun, Chen Ping, “Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells”Nanomaterials11, 1023 (2021).
24.Wang Xiaowei, Liang Feng*, Zhao Degang*, Liu Zongshun, Zhu Jianjun, Peng Liyuan, Yang Jing, “Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth” Appl. Surf. Sci. 548, 149272 (2021).
25.Wang Xiaowei, Liang Feng*, Zhao Degang*, Chen Ping, Liu Zongshun, Yang Jing, “The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes”Appl. Surf. Sci. 570, 151132 (2021).
26.Peng Liyuan, Zhao Degang*, Zhu Jianjun, Wang Wenjie, Liang Feng*, Jiang Desheng, Liu Zongshun, Chen Ping, Yang Jing, Liu Shuangtao, Xing Yao, Zhang Liqun, “Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment” Appl. Surf. Sci. 505, 144283 (2020).
27.Hou Yufei, Liang Feng*, Zhao Degang*, Chen Ping, Yang Jing,Liu Zongshun, “Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells”J. Alloy. Compd. 874, 159851 (2021).
28.Hou Yufei, Peng Liyuan, Liang* Feng, Zhao Degang*, Yang Jing, Liu Zongshun, Chen Ping, “Study the influence mechanism of In/Ga ratio on InGaN waveguide layers during epitaxial growth” J. Alloy. Compd. 894, 162488 (2021).
29.Wang Xiaowei, Liang Feng*, Zhao Degang*, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Yang Jing, Wang Wenjie, “Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics” J. Alloy. Compd. 790, 197 (2019).
30.Wang Xiaowei, Liang Feng*, Zhao Degang*, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Yang Jing, “Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN” J. Alloy. Compd. 806, 1077 (2019).
