Author(s): Huang, QX (Huang, Qinxing); Zheng, J (Zheng, Jun); Zhu, YP (Zhu, Yupeng); Liu, XQ (Liu, Xiangquan); Liu, ZP (Liu, Zhipeng); Yang, YZ (Yang, Yazhou); Cui, JL (Cui, Jinlai); Liu, Z (Liu, Zhi); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen)

Source: OPTICS LETTERS Volume: 49 Issue: 5  Pages: 1365-1368  DOI: 10.1364/OL.516928  Published Date: 2024 MAR 1 

Abstract: In this work, GeSn lateral p-i-n photodetectors (PDs) on insulator were fabricated with an active GeSn layer grown by the rapid melting growth (RMG) method. Taking advantages of the defect-free GeSn strips, GeSn PDs with 5.3% Sn content have low dark current and high responsivities, which are about 0.48, 0.47, and 0.24 A/W for wavelengths of 1550, 1630, and 2000 nm, respectively. The radio frequency of the lateral GeSn PDs was also studied and a 3 dB bandwidth of about 3.8 GHz was achieved. These results indicate that the GeSn grown by the rapid melting growth method is capable of fabricating high-performance Si-based optoelectronic devices. (c) 2024 Optica Publishing Group

Accession Number: WOS:001202761600005

PubMed ID: 38427014

ISSN: 0146-9592

eISSN: 1539-4794