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Theoretical analysis on the energy band properties of N- and M-structure type-II superlattices

2020-08-31

Author(s): Du, YN (Du, Ya-nan); Xu, Y (Xu, Yun); Song, GF (Song, Guo-feng)

Source: SUPERLATTICES AND MICROSTRUCTURES Volume: 145 Article Number: 106590 DOI: 10.1016/j.spmi.2020.106590 Published: SEP 2020

Abstract: The electronic band structure of conventional InAs/GaSb superlattices (SLs), N- and M-structure were investigated by 8-band k.p method. A good agreement between the theoretical calculation and experimental results was obtained. Compared with the conventional structure, the band gap and effective mass of N- and M-structure both increased with the thickness of A1Sb layers raising. The splitting energy between first heavy hole band (HH1) and first light hole band (LH1) increased in N-structure, but firstly raised and then reduced in M-structure. The impact of changing the position of A1Sb barrier in M-structure is also studied. By altering the position of the barrier layer, the wave function overlaps can be controlled at the InAs/GaSb or GaSb/InAs interface in PN junction. By comparing the three type SLs, we found that N- and M-structure can obviously suppress dark current and enhance wave function overlap. Besides, M-structure can be more alternative in structure design.

Accession Number: WOS:000557880800010

ISSN: 0749-6036

Full Text: https://www.sciencedirect.com/science/article/pii/S0749603620300483?via%3Dihub



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