Spin filtering in a HgTe topological insulator PN junction via Rashba spin-orbit interaction
Author(s): Lin, L (Lin, Liangzhong); Pu, Q (Pu, Qingmin); Shi, Z (Shi, Zhiqiang); Li, X (Li, Xiaojing); Zhang, D (Zhang, Dong); Zhu, J (Zhu, Jiaji); Wu, Z (Wu, Zhenhua)
Source: SOLID STATE COMMUNICATIONS Volume: 313 Article Number: 113906 DOI: 10.1016/j.ssc.2020.113906 Published: JUN 2020
Abstract: This work presents theoretically investigate the electron transport through a PN junction in two-dimensional HgTe/CdTe topological insulator. We find that the transmission can be tuned by changing the incidence angle, gate voltage, Fermi energy and the Rashba spin-orbit interaction (RSOI). By tuning the strength of RSOI modulation, the efficient spin-flip conversion for the spin-up and spin-down channels are found. Furthermore, a perfect one-channel transmission mode with T = 1 is formed due to the spin-split induced by the RSOI. This RSOI-induced spin-split mechanism provides us a way of pure electrical modulation to manipulate the spin and charge currents.
Accession Number: WOS:000550270700004
ISSN: 0038-1098
eISSN: 1879-2766
Full Text: https://linkinghub.elsevier.com/retrieve/pii/S0038109819311366