Low dark current and high gain-bandwidth product of avalanche photodiodes: optimization and realization
Author(s): Wang, H (Wang, Hui); Yang, XH (Yang, Xiaohong); Wang, R (Wang, Rui); He, TT (He, Tingting); Liu, KB (Liu, Kaibao)
Source: OPTICS EXPRESS Volume: 28 Issue: 11 Pages: 16211-16229 DOI: 10.1364/OE.393063 Published: MAY 25 2020
Abstract: In this paper, a new method combining carrier transport in semiconductors with an RF equivalent circuit was put forward to simulate the frequency response of an avalanche photodiode (APD). The main trade-off between the gain-bandwidth product (GBP) and the dark current was analyzed to optimize the structure of an APD; and a separated absorption, grading, charge, multiplication, charge, transit (SAGCMCT) structure with 120 nm balanced InAlAs multiplication layer was proposed to reduce the dark current and improve the frequency response. The fabricated triple-mesa type back-illuminated InGaAs/InAlAs APD achieved the properties of low dark current of 6.7 nA at 0.9V(b) and high GBP over 210 GHz. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Accession Number: WOS:000542303000037
PubMed ID: 32549448
ISSN: 1094-4087
Full Text: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-28-11-16211