A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Optoelectronic parametric oscillator

2020-07-02

Author(s): Hao, TF (Hao, Tengfei); Cen, QZ (Cen, Qizhuang); Guan, SH (Guan, Shanhong); Li, W (Li, Wei); Dai, YT (Dai, Yitang); Zhu, NH (Zhu, Ninghua); Li, M (Li, Ming)

Source: LIGHT-SCIENCE & APPLICATIONS Volume: 9 Issue: 1 Article Number: 102 DOI: 10.1038/s41377-020-0337-5 Published: JUN 15 2020

Abstract: Oscillators are one of the key elements in various applications as a signal source to generate periodic oscillations. Among them, an optical parametric oscillator (OPO) is a driven harmonic oscillator based on parametric frequency conversion in an optical cavity, which has been widely investigated as a coherent light source with an extremely wide wavelength tuning range. However, steady oscillation in an OPO is confined by the cavity delay, which leads to difficulty in frequency tuning, and the frequency tuning is discrete with the minimum tuning step determined by the cavity delay. Here, we propose and demonstrate a counterpart of an OPO in the optoelectronic domain, i.e., an optoelectronic parametric oscillator (OEPO) based on parametric frequency conversion in an optoelectronic cavity to generate microwave signals. Owing to the unique energy-transition process in the optoelectronic cavity, the phase evolution in the OEPO is not linear, leading to steady single-mode oscillation or multimode oscillation that is not bounded by the cavity delay. Furthermore, the multimode oscillation in the OEPO is stable and easy to realize owing to the phase control of the parametric frequency-conversion process in the optoelectronic cavity, while stable multimode oscillation is difficult to achieve in conventional oscillators such as an optoelectronic oscillator (OEO) or an OPO due to the mode-hopping and mode-competition effect. The proposed OEPO has great potential in applications such as microwave signal generation, oscillator-based computation, and radio-frequency phase-stable transfer.

A new oscillator featuring phase-controlled oscillation Parametric oscillators are driven harmonic oscillators that widely used in various areas of applications. In the past, parametric oscillators have been designed in the pure optical domain or the electrical domain, which are both delay-controlled oscillators with a steady oscillation confined by the cavity delay. Ming Li from the Chinese Academy of Sciences in Beijing and his colleagues have now developed a brand-new parametric oscillator in the microwave photonics domain, i.e., a hybrid optical-electrical oscillator. Owing to the unique parametric process in the optoelectronics cavity, the oscillation in the optoelectronic parametric oscillator is a phase-controlled operation, leading to a steady oscillation that is not bounded by the cavity delay. Continuously tuneable single frequency oscillation and stable multimode oscillation are produced by the new optoelectronic parametric oscillator, which are hard or even impossible to achieve in traditional delay-controlled oscillators.

Accession Number: WOS:000540517600001

PubMed ID: 32566172

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Li, Ming                  0000-0001-8959-9619

ISSN: 2047-7538

Full Text: https://www.nature.com/articles/s41377-020-0337-5



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明