A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Distinguishing the inverse spin Hall effect photocurrent of electrons and holes by comparing to the classical Hall effect

2020-05-15

 

Author(s): Zhang, Y (Zhang, Yang); Liu, Y (Liu, Yu); Zeng, XL (Zeng, Xiao Lin); Wu, J (Wu, Jing); Yu, JL (Yu, Jin Ling); Chen, YH (Chen, Yong Hai)

Source: OPTICS EXPRESS Volume: 28 Issue: 6 Pages: 8331-8340 DOI: 10.1364/OE.387692 Published: MAR 16 2020

Abstract: The photo-excited electrons and holes move in the same direction in the diffusion and in the opposite direction in the drift under an electric field. Therefore, the contribution to the inverse spin Hall current of photo-excited electrons and holes in the diffusion regime is different to that in the drift regime under electric field. By comparing the classical Hall effect with the inverse spin Hall effect in both diffusion and drift regime, we develop an optical method to distinguish the contributions of electrons and holes in the inverse spin Hall effect. It is found that the contribution of the inverse spin Hall effect of electrons and holes in an InGaAs/AlGaAs un-doped multiple quantum well is approximately equal at room temperature. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000522511600048

PubMed ID: 32225460

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Yu, Jinling                  0000-0003-0108-136X

ISSN: 1094-4087

Full Text: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-28-6-8331



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明