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Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

2019-04-01

 
Author(s): Cai, SX (Cai, Shuxian); Liu, XF (Liu, Xingfang); Zheng, X (Zheng, Xin); Liu, ZH (Liu, Zhonghua)
Source: CRYSTALS Volume: 8 Issue: 12 Article Number: 449 DOI: 10.3390/cryst8120449 Published: DEC 2018
Abstract: Ordered graphene ribbons were grown on the surface of 4 degrees off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (mu-Raman). SEM showed that there were gray and dark ribbons on the substrate surface, and AFM further revealed that these ordered graphene ribbons had clear stepped morphologies due to surface step-bunching. It was shown by mu-Raman that the numbers of graphene layers of these two types of regions were different. The gray region was composed of mono- or bilayer ordered graphene ribbon, while the dark region was of tri- or few-layer ribbon. Meanwhile, ribbons were all homogeneous and had a width up to 40 mu m and a length up to 1000 mu m, without micro defects such as grain boundaries, ridges, or mono- and few-layer graphene mixtures. The results of this study are useful for optimized growth of high-quality graphene film on silicon carbide crystal.
全文链接:https://www.mdpi.com/2073-4352/8/12/449



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