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Enhancing oxidation rate of 4H-SiC by oxygen ion implantation

2018-11-22

Authors: Liu, M; Zhang, SY; Yang, X; Chen, X; Fan, ZC; Wang, XD; Yang, FH; Ma, C; He, Z
JOURNAL OF MATERIALS SCIENCE
Volume: 54 Issue: 2 Pages: 1147-1152 Published: JAN 2019 Document type: Article
DOI: 10.1007/s10853-018-2921-0
全文链接:https://link.springer.com/article/10.1007/s10853-018-2921-0

 

 



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