Carbon-Related Defects as a Source for the Enhancement of Yellow Luminesc...
Ultrafast Modulation of Magnetization Dynamics in Ferromagnetic (Ga, Mn)A...
Optical phase transition properties of vanadium dioxide thin film charact...
High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc...
Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computatio...
Theoretical study of the bandgap regulation of a two-dimensional GeSn all...
Ultra-high-Q UV microring resonators based on a single-crystalline AIN pl...
Improving the electrical properties of InAs nanowire field effect transis...
A Novel Nanocone Cluster Microstructure with Anti-reflection and Superhyd...
Thickness-Dependent Carrier Transport Characteristics of a New 2D Element...
官方微信
友情链接

Measurement of the Overhauser field in a two-dimensional electron system at weak magnetic fields

2018-11-15

Measurement of the Overhauser field in a two-dimensional electron system at weak magnetic fields
Authors: Qian, X; Ji, Y
JOURNAL OF APPLIED PHYSICS
Volume: 124 Issue: 16 Published: OCT 28 2018 Document type: Article
DOI: 10.1063/1.5047552
全文链接:https://aip.scitation.org/doi/10.1063/1.5047552

 

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明