Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition
2018-11-09
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition
Authors: Liu, XF; Yan, GG; Liu, B; Shen, ZW; Wen, ZX; Chen, J; Zhao, WS; Wang, L; Zhang, F; Sun, GS; Zeng, YP
JOURNAL OF CRYSTAL GROWTH
Volume: 504 Pages: 7-12 Published: DEC 15 2018 Document type: Article
DOI: 10.1016/j.jcrysgro.2018.09.030
全文链接:https://www.sciencedirect.com/science/article/pii/S0022024818304524