Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors
2018-09-07
Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors
Authors: Ma, LH; Han, WH; Zhao, XS; Guo, YY; Dou, YM; Yang, FH
CHINESE PHYSICS B
Volume: 27 Issue: 8 Published: AUG 2018 Document type: Article
DOI: 10.1088/1674-1056/27/8/088106
全文链接:http://cpb.iphy.ac.cn/EN/abstract/abstract72571.shtml