Temperature dependent excitonic transition energies and linewidths of mon...
Moire Phonons in Twisted Bilayer MoS2
Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppres...
Theoretical analysis of induction heating in high-temperature epitaxial g...
Deep levels induced optical memory effect in thin InGaN film
Topologically protected interface phonons in two-dimensional nanomaterial...
Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of I...
Photonic Crystal Diode Laser Array Integrated With a Phase Shifter for Na...
Microwave Photonics for Featured Applications in High-Speed Railways: Com...
Toward Monolithic Integration of OEOs: From Systems to Chips
官方微信
友情链接

Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode

2018-05-10

Title: Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode
Authors: Li, YJ; Wang, JQ; Guo, L; Chen, GC; Li, ZS; Yu, HY; Zhou, XL; Wang, HL; Chen, WX; Pan, JQ
Author Full Names: Li, Ya-Jie; Wang, Jia-Qi; Guo, Lu; Chen, Guang-Can; Li, Zhao-Song; Yu, Hong-Yan; Zhou, Xu-Liang; Wang, Huo-Lei; Chen, Wei-Xi; Pan, Jiao-Qing
Source: CHINESE PHYSICS LETTERS, 35 (4):10.1088/0256-307X/35/4/044202 APR 2018
ISSN: 0256-307X
eISSN: 1741-3540
Article Number: 044202
Unique ID: WOS:000430567000010
全文链接:http://iopscience.iop.org/article/10.1088/0256-307X/35/4/044202

 

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明