Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mob...
Electrical Initialization of Electron and Nuclear Spins in a Single Quant...
Study on the structural, optical, and electrical properties of the yellow...
MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-E...
Significantly improved surface morphology of N-polar GaN film grown on Si...
Valley Zeeman splitting of monolayer MoS2 probed by low-field magnetic ci...
Chiral zero energy modes in two-dimensional disordered Dirac semimetals
Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect ...
Megahertz-resolution programmable microwave shaper
Reconfigurable microwave signal processor with a phase shift of pi
官方微信
友情链接

Observation of Unusual Optical Band Structure of CH3NH3PbI3 Perovskite Single Crystal

2018-05-10

Title: Observation of Unusual Optical Band Structure of CH3NH3PbI3 Perovskite Single Crystal
Authors: Huang, W; Yue, SZ; Liu, Y; Zhu, LP; Jin, P; Wu, Q; Zhang, Y; Chen, YA; Liu, K; Liang, P; Qu, SC; Wang, ZJ; Chen, YH
Author Full Names: Huang, Wei; Yue, Shizhong; Liu, Yu; Zhu, Laipan; Jin, Peng; Wu, Qing; Zhang, Yang; Chen, Yanan; Liu, Kong; Liang, Ping; Qu, Shengchun; Wang, Zhijie; Chen, Yonghai
Source: ACS PHOTONICS, 5 (4):1583-1590; 10.1021/acsphotonics.8b00033 APR 2018
ISSN: 2330-4022
Unique ID: WOS:000430642500055
全文链接:https://pubs.acs.org/doi/abs/10.1021/acsphotonics.8b00033

 

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 © 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明