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Influence of dislocation density and carbon impurities in i-GaN layer on the performance of Schottky barrier ultraviolet photodetectors

2018-05-10

Title: Influence of dislocation density and carbon impurities in i-GaN layer on the performance of Schottky barrier ultraviolet photodetectors
Authors: Yi, LK; Qi, HR; Huang, JL; Zhou, M; Zhao, DG; Jiang, DS; Yang, J; Liu, W; Liang, F
Author Full Names: Yi Linkai; Qi Haoran; Huang Jialin; Zhou Mei; Zhao Degang; Jiang Desheng; Yang Jing; Liu Wei; Liang Feng
Source: MATERIALS RESEARCH EXPRESS, 5 (4):10.1088/2053-1591/aabdd1 APR 2018
ISSN: 2053-1591
Article Number: 046207
Unique ID: WOS:000431061100001
全文链接:http://iopscience.iop.org/article/10.1088/2053-1591/aabdd1

 

 



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