Online ultrasonic terminal for measuring pig backfat thickness
Wet Oxidation Process to Al0.98Ga0.02As Layer for the Vertical-Cavity-Sur...
Near-infrared and mid-infrared semiconductor broadband light emitters
Super-hydrophilicity of hydroxy modified poly(m-phenylenediamine) aerogel...
Optical Frequency Comb Generation in Highly Nonlinear Fiber With Dual-Mod...
Recent progress and perspectives of metal oxides based on-chip microsuper...
Coupled Supercapacitor and Triboelectric Nanogenerator Boost Biomimetic P...
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the...
Designing a porous-crystalline structure of -Ga2O3: a potential approach ...
Atomic defects in monolayer WSe2 tunneling FETs studied by systematic ab ...
官方微信
友情链接

Preparation and characterization of Eu2+-doped GaN luminescent nanofibers by electrospinning method

2018-02-01

Title: Preparation and characterization of Eu2+-doped GaN luminescent nanofibers by electrospinning method
Authors: Chen, Y; Wei, XC; Liu, HW
Author Full Names: Chen Yu; Wei Xue-Cheng; Liu Hong-Wei
Source: JOURNAL OF INFRARED AND MILLIMETER WAVES, 36 (6):646-649; 10.11972/j.issn.1001-9014.2017.06.002 DEC 2017
ISSN: 1001-9014
Unique ID: WOS:000419930500002
全文链接:http://journal.sitp.ac.cn/hwyhmb/hwyhmben/ch/reader/view_abstract.aspx?file_no=170085&flag=1

 




关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 © 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明