Polymer thermal optical switch for a flexible photonic circuit
Design Techniques for Signal Reflection Suppression in High-Speed 25-Gb/s...
Fabrication of rigid and flexible SrGe4O9 nanotube-based sensors for room...
Fiber gas sensor-integrated smart face mask for room-temperature distingu...
Characteristics of III-nitride based laser diode employed for short range...
Single photon emissions from InAs/GaAs quantum dots embedded in GaAs/SiO2...
Prediction of Lumen Depreciation and Color Shift for Phosphor-Converted W...
A novel ventricular restraint device (ASD) repetitively deliver Salvia mi...
Surface cleaning of hot-rolled sheet steel by laser ablation of oxide lay...
Spectral shape of one-photon luminescence from single gold nanorods
官方微信
友情链接

48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth

2018-01-12

Title: 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth
Authors: Liu, Z; Yang, F; Wu, WZ; Cong, H; Zheng, J; Li, CB; Xue, CL; Cheng, BW; Wang, QM
Author Full Names: Liu, Zhi; Yang, Fan; Wu, Wenzhou; Cong, Hui; Zheng, Jun; Li, Chuanbo; Xue, Chunlai; Cheng, Buwen; Wang, Qiming
Source: JOURNAL OF LIGHTWAVE TECHNOLOGY, 35 (24):5306-5310; 10.1109/JLT.2017.2766266 DEC 15 2017
ISSN: 0733-8724
eISSN: 1558-2213
Unique ID: WOS:000418769500006

全文链接:http://ieeexplore.ieee.org/document/8082492/

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 © 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明