Printable Zn2GeO4 Microwires Based Flexible Photodetectors with Tunable P...
Atomic-Ordering-Induced Quantum Phase Transition between Topological Crys...
Structural Phase Transition and a Mutation of Electron Mobility in ZnxCd1...
Spin depolarization dynamics of WSe2 bilayer
Coherent rainbows from solids
End-fire injection of light into high-Q silicon microdisks
Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy
Laterally-coupled distributed feedback lasers with optimized gratings by ...
Topological Magnon Modes in Patterned Ferrimagnetic Insulator Thin Films
官方微信
友情链接

Modal gain characteristics of a 2 mu m InGaSb/AlGaAsSb passively mode-locked quantum well laser

2018-01-12

Title: Modal gain characteristics of a 2 mu m InGaSb/AlGaAsSb passively mode-locked quantum well laser
Authors: Li, X; Wang, H; Qiao, ZL; Guo, X; Ng, GI; Zhang, Y; Niu, ZC; Tong, CZ; Liu, CY
Author Full Names: Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang
Source: APPLIED PHYSICS LETTERS, 111 (25):10.1063/1.5010015 DEC 18 2017
ISSN: 0003-6951
eISSN: 1077-3118
Article Number: 251105
Unique ID: WOS:000418648800005
全文链接:http://aip.scitation.org/doi/10.1063/1.5010015

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 © 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明