Temperature dependent excitonic transition energies and linewidths of mon...
Moire Phonons in Twisted Bilayer MoS2
Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppres...
Theoretical analysis of induction heating in high-temperature epitaxial g...
Deep levels induced optical memory effect in thin InGaN film
Topologically protected interface phonons in two-dimensional nanomaterial...
Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of I...
Photonic Crystal Diode Laser Array Integrated With a Phase Shifter for Na...
Microwave Photonics for Featured Applications in High-Speed Railways: Com...
Toward Monolithic Integration of OEOs: From Systems to Chips
官方微信
友情链接

Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications

2018-01-12

Title: Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications
Authors: Xue, B; Liu, Z; Yang, J; Feng, LS; Zhang, N; Wang, JX; Li, JM
Author Full Names: Xue, Bin; Liu, Zhe; Yang, Jie; Feng, Liangsen; Zhang, Ning; Wang, Junxi; Li, Jinmin
Source: OPTICS COMMUNICATIONS, 410 525-530; 10.1016/j.optcom.2017.10.086 MAR 1 2018
ISSN: 0030-4018
eISSN: 1873-0310
Unique ID: WOS:000418646100081
全文链接:http://www.sciencedirect.com/science/article/pii/S0030401817310064?via%3Dihub

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明