第312期:Trends of Reconfigurable and in-Memory Processing Architectures ...
第311期: Progress in Bonding and Epitaxial Growth for Heterogeneous Phot...
第310期:Oxide and Perovskite Structures Grown from Solutions for Advance...
第309期:Chip-based Brillouin devices: Harnessing photon-phonon interacti...
第308期: Leap of Topological Physics: Learning from Honeycomb Structure ...
第307期: Progress in Nanoscale Characterization and Manipulation
第306期:Understanding the semiconductor nanostructures using advanced el...
第305期:Novel two-dimensional van der Waals crystals and heterostructures
第304期:Metallopolyynes and Metallophosphors:New Multifunctional Materia...
第303期:High efficiency organic-inorganic hybrid perovskite light-emitti...
官方微信
友情链接

第296期:Vertical-cavity surface-emitting lasers for data communications and integrated photonic-electronic circuits

2016-10-31

  报告题目: Vertical-cavity surface-emitting lasers for data communications and integrated photonic-electronic circuits

  报告人: Prof. Dr. James A. Lott(ZentrumfürNanophotonik, InstitutfürFestkorperphysik, TechnischeUniversitat Berlin, Federal Republic of Germany)

  时间: 2016年11月11日(星期五)上午10:00点

  地点: 中国科学院半导体研究所图书馆101会议室

  Abstract: Vertical-cavity surface-emitting lasers (VCSELs) are a key enabling nanometer-scale photonics technology for optical fiber and free-space data communications, exaflop-per-second supercomputing, illumination, and sensing systems. I review my research group’s work on energy-efficient, gallium-arsenide-based VCSELs for short-reach and very-short-reach optical interconnects operating beyond 50 gigabits-per-second and below 50 femtojoules-per-bit, and our novel designs and recent results on the development of reduced-dimension-VCSELs envisioned for on-chip integration with silicon electronic and photonic systems.

  Biography:J. A. Lott is a Professor in the Institute of Solid-State Physics at the Technische Universitat Berlin, Federal Republic of Germany. He was raised in Ewa Beach, Hawaii and Sunnyvale, California, United States of America (USA). He received the bachelor of science degree in electrical engineering and computer sciences from the University of California at Berkeley, USA in 1983 and the Ph.D. from the University of New Mexico, USA in 1993. He performed research at Sandia National Laboratories (US Department of Energy) in Albuquerque, New Mexico on quantum optoelectronic materials, devices, and systems from 1988-1993. While on sabbaticals he served as a visiting scientist at the NEC Optoelectronics Research Laboratories in Tsukuba, Japan in 1995, and at the Samsung Electronics Company in Suwon, Republic of Korea in 1996.



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 © 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明